Atomic Layer Deposition of Titanium Nitride in Horizontal Vias Using Hydrazine as Nitrogen Precursor

Publikation: Konferenzbeitrag › Poster

Originalsprache	Englisch
Publikationsstatus	Veröffentlicht - 14 Dez. 2023
Veranstaltung	IEEE Semiconductor Interface Specialists Conference - Bahia Resort Hotel, San Diego, CA, San Diego, USA/Vereinigte Staaten Dauer: 13 Dez. 2023 → 16 Dez. 2023 Konferenznummer: 54 https://www.ieeesisc.org/programs/2023_SISC_technical_program.pdf

Konferenz	IEEE Semiconductor Interface Specialists Conference
Kurztitel	IEEE SISC
Land/Gebiet	USA/Vereinigte Staaten
Ort	San Diego
Zeitraum	13/12/23 → 16/12/23
Internetadresse	https://www.ieeesisc.org/programs/2023_SISC_technical_program.pdf

Dieses zitieren

@conference{aa024bbefd4a4fa3924c72722ce2a372,

title = "Atomic Layer Deposition of Titanium Nitride in Horizontal Vias Using Hydrazine as Nitrogen Precursor",

keywords = "TiN, ALD, Diffusion barrier, TEM",

author = "Jannick Fammels and Julian Pilz and Dmytro Solonenko",

year = "2023",

month = dec,

day = "14",

language = "English",

note = "IEEE Semiconductor Interface Specialists Conference, IEEE SISC ; Conference date: 13-12-2023 Through 16-12-2023",

url = "https://www.ieeesisc.org/programs/2023_SISC_technical_program.pdf",

}

TY - CONF

T1 - Atomic Layer Deposition of Titanium Nitride in Horizontal Vias Using Hydrazine as Nitrogen Precursor

AU - Fammels, Jannick

AU - Pilz, Julian

AU - Solonenko, Dmytro

N1 - Conference code: 54

PY - 2023/12/14

Y1 - 2023/12/14

KW - TiN

KW - ALD

KW - Diffusion barrier

KW - TEM

M3 - Poster

T2 - IEEE Semiconductor Interface Specialists Conference

Y2 - 13 December 2023 through 16 December 2023

ER -