A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

Peng Zhang; Lin He; Yufeng Guo; Xiaohua Fan; Hao Gao

doi:10.1109/RFIT49453.2020.9226203

A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

Peng Zhang, Lin He, Yufeng Guo, Xiaohua Fan, Hao Gao

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.

Originalsprache	Englisch
Titel	2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Herausgeber (Verlag)	IEEE Computer Society
Seiten	196-198
Seitenumfang	3
ISBN (Print)	978-1-7281-6507-3
DOIs	https://doi.org/10.1109/RFIT49453.2020.9226203
Publikationsstatus	Veröffentlicht - 4 Sep. 2020
Extern publiziert	Ja
Veranstaltung	2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Hiroshima, Japan Dauer: 2 Sep. 2020 → 4 Sep. 2020

Konferenz

Konferenz	2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Zeitraum	2/09/20 → 4/09/20

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10.1109/RFIT49453.2020.9226203

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9226203

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@inproceedings{88ac397b62d147e78e259708e7c78adc,

title = "A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology",

abstract = "In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.",

keywords = "Power amplifiers, Calibration, Power generation, Capacitors, Inductance, Silicon germanium, Gain",

author = "Peng Zhang and Lin He and Yufeng Guo and Xiaohua Fan and Hao Gao",

year = "2020",

month = sep,

day = "4",

doi = "10.1109/RFIT49453.2020.9226203",

language = "English",

isbn = "978-1-7281-6507-3",

pages = "196--198",

booktitle = "2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)",

publisher = "IEEE Computer Society",

address = "United States",

note = "2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ; Conference date: 02-09-2020 Through 04-09-2020",

}

Zhang, P, He, L, Guo, Y, Fan, X & Gao, H 2020, A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology. in 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)., 9226203, IEEE Computer Society, S. 196-198, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2/09/20. https://doi.org/10.1109/RFIT49453.2020.9226203

TY - GEN

T1 - A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

AU - Zhang, Peng

AU - He, Lin

AU - Guo, Yufeng

AU - Fan, Xiaohua

AU - Gao, Hao

PY - 2020/9/4

Y1 - 2020/9/4

N2 - In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.

AB - In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.

KW - Power amplifiers

KW - Calibration

KW - Power generation

KW - Capacitors

KW - Inductance

KW - Silicon germanium

KW - Gain

UR - https://ieeexplore.ieee.org/document/9226203/

U2 - 10.1109/RFIT49453.2020.9226203

DO - 10.1109/RFIT49453.2020.9226203

M3 - Conference Paper

SN - 978-1-7281-6507-3

SP - 196

EP - 198

BT - 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

PB - IEEE Computer Society

T2 - 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

Y2 - 2 September 2020 through 4 September 2020

ER -

A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology

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