Abstract
In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.
| Original language | English |
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| Title of host publication | 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) |
| Publisher | IEEE Computer Society |
| Pages | 196-198 |
| Number of pages | 3 |
| ISBN (Print) | 978-1-7281-6507-3 |
| DOIs | |
| Publication status | Published - 4 Sept 2020 |
| Externally published | Yes |
| Event | 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Hiroshima, Japan Duration: 2 Sept 2020 → 4 Sept 2020 |
Conference
| Conference | 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) |
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| Period | 2/09/20 → 4/09/20 |
Keywords
- Power amplifiers
- Calibration
- Power generation
- Capacitors
- Inductance
- Silicon germanium
- Gain