Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3  thin films for neuronal activity measurement

Luiz Enger; FLAMENT Stephane; Olivier Rousseau; Bruno Guillet; Marc Lam Chok Sing; sandeep kumar chaluvadi; Vicente Munoz; Ruben Guerrero; María Teresa González; Julio Camarero; Laurence Méchin

Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement

Luiz Enger, FLAMENT Stephane, Olivier Rousseau, Bruno Guillet, Marc Lam Chok Sing, sandeep kumar chaluvadi, Vicente Munoz, Ruben Guerrero, María Teresa González, Julio Camarero, Laurence Méchin

Magnetic Microsystem Technologies (MMT)

Research output: Contribution to conference (No Proceedings) › Poster › peer-review

Original language	English
Publication status	Published - 24 Jun 2019

Cite this

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title = "Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement",

author = "Luiz Enger and FLAMENT Stephane and Olivier Rousseau and Bruno Guillet and Sing, {Marc Lam Chok} and chaluvadi, {sandeep kumar} and Vicente Munoz and Ruben Guerrero and Gonz{\'a}lez, {Mar{\'i}a Teresa} and Julio Camarero and Laurence M{\'e}chin",

year = "2019",

month = jun,

day = "24",

language = "English",

}

TY - CONF

T1 - Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement

AU - Enger, Luiz

AU - Stephane, FLAMENT

AU - Rousseau, Olivier

AU - Guillet, Bruno

AU - Sing, Marc Lam Chok

AU - chaluvadi, sandeep kumar

AU - Munoz, Vicente

AU - Guerrero, Ruben

AU - González, María Teresa

AU - Camarero, Julio

AU - Méchin, Laurence

PY - 2019/6/24

Y1 - 2019/6/24

UR - https://hal.archives-ouvertes.fr/hal-02523176

M3 - Poster

ER -

Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement

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