Self-heating in GaN transistors designed for high-power operation

J. Kuzmik; M. Tapajna; L. Valik; M. Molnar; D. Donoval; C. Fleury; D. Pogany; G. Strasser; O. Hilt; F. Brunner; J. Wurfl

doi:10.1109/TED.2014.2350516

Self-heating in GaN transistors designed for high-power operation

J. Kuzmik, M. Tapajna, L. Valik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Wurfl

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2014.2350516
Publication status	Published - 2014

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10.1109/TED.2014.2350516

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@article{d06c471276fa426cba7d94a10394586c,

title = "Self-heating in GaN transistors designed for high-power operation",

author = "J. Kuzmik and M. Tapajna and L. Valik and M. Molnar and D. Donoval and C. Fleury and D. Pogany and G. Strasser and O. Hilt and F. Brunner and J. Wurfl",

year = "2014",

doi = "10.1109/TED.2014.2350516",

language = "undefiniert/unbekannt",

}

TY - JOUR

T1 - Self-heating in GaN transistors designed for high-power operation

AU - Kuzmik, J.

AU - Tapajna, M.

AU - Valik, L.

AU - Molnar, M.

AU - Donoval, D.

AU - Fleury, C.

AU - Pogany, D.

AU - Strasser, G.

AU - Hilt, O.

AU - Brunner, F.

AU - Wurfl, J.

PY - 2014

Y1 - 2014

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84907457082&partnerID=MN8TOARS

U2 - 10.1109/TED.2014.2350516

DO - 10.1109/TED.2014.2350516

M3 - Artikel

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Self-heating in GaN transistors designed for high-power operation

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