Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

C. C. Kocher; T. J. Puchtler; J. C. Jarman; T. Zhu; Tong Wang; L. Nuttall; R. A. Oliver; R. A. Taylor

doi:10.1063/1.5008720

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

C. C. Kocher, T. J. Puchtler, J. C. Jarman, T. Zhu, Tong Wang, L. Nuttall, R. A. Oliver, R. A. Taylor

Research output: Contribution to journal › Article › peer-review

Abstract

Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a 𝑔(2)(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K.

Original language	American English
Pages (from-to)	251108
Number of pages	1
Journal	Applied Physics Letters
Volume	111
Issue number	25
DOIs	https://doi.org/10.1063/1.5008720
Publication status	Published - 1 Dec 2017
Externally published	Yes

Access to Document

10.1063/1.5008720

https://doi.org/10.1063%2F1.5008720

Cite this

@article{5a06a6107e284048bc0d28974992b159,

title = "Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot",

abstract = "Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a 푔(2)(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K.",

author = "Kocher, {C. C.} and Puchtler, {T. J.} and Jarman, {J. C.} and T. Zhu and Tong Wang and L. Nuttall and Oliver, {R. A.} and Taylor, {R. A.}",

year = "2017",

month = dec,

day = "1",

doi = "10.1063/1.5008720",

language = "Englisch (Amerika)",

volume = "111",

pages = "251108",

number = "25",

}

TY - JOUR

T1 - Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

AU - Kocher, C. C.

AU - Puchtler, T. J.

AU - Jarman, J. C.

AU - Zhu, T.

AU - Wang, Tong

AU - Nuttall, L.

AU - Oliver, R. A.

AU - Taylor, R. A.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a 푔(2)(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K.

AB - Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a 푔(2)(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K.

U2 - 10.1063/1.5008720

DO - 10.1063/1.5008720

M3 - Artikel

SN - 0003-6951

VL - 111

SP - 251108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Abstract

Access to Document

Fingerprint

Cite this