Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations

M. Capriotti; O. Bethge; C. Fleury; A. Alexewicz; E. Bertagnolli; D. Pogany; G. Strasser

Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations

M. Capriotti, O. Bethge, C. Fleury, A. Alexewicz, E. Bertagnolli, D. Pogany, G. Strasser

Research output: Contribution to conference (No Proceedings) › Paper

Original language	Undefined/Unknown
Publication status	Published - 1 Oct 2014

Cite this

@conference{d6de77e002154e1db00d140aef93b8d0,

title = "Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations",

author = "M. Capriotti and O. Bethge and C. Fleury and A. Alexewicz and E. Bertagnolli and D. Pogany and G. Strasser",

year = "2014",

month = oct,

day = "1",

language = "undefiniert/unbekannt",

}