Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors

C. Fleury, W. Simbürger, D. Pogany

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2019.06.023
Publication status	Published - 2019

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TY - JOUR

T1 - Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors

AU - Fleury, C.

AU - Simbürger, W.

AU - Pogany, D.

PY - 2019

Y1 - 2019

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85074697398&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2019.06.023

DO - 10.1016/j.microrel.2019.06.023

M3 - Artikel

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -