Abstract
Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manufacturing concern. Raman spectroscopy can measure stress in silicon directly, non-destructively and quantitatively. Here, we used Raman spectroscopy to analyse the stress along die sidewalls formed by mechanical and laser dicing, demonstrating that micro-Raman spectroscopy is a feasible sensing method for measuring stress in silicon die sidewalls during manufacture. We found that laser dicing introduces stresses that are significantly lower than those induced by mechanical dicing (typically 170MPa c.f. 70MPa). In addition, for mechanical diced chips different metaphases of silicon were found.
Original language | German (Austria) |
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Title of host publication | 2016 IEEE SENSORS |
Publisher | IEEE Computer Society |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Print) | 978-1-4799-8288-2 |
DOIs | |
Publication status | Published - 3 Nov 2016 |
Externally published | Yes |
Event | 2016 IEEE SENSORS - Orlando, FL, USA Duration: 30 Oct 2016 → 3 Nov 2016 |
Conference
Conference | 2016 IEEE SENSORS |
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Period | 30/10/16 → 3/11/16 |