Bandgap energy bowing parameter of strained and relaxed InGaN layers

G. Orsal; Y. El Gmili; N. Fressengeas; J. Streque; R. Djerboub; T. Moudakir; S. Sundaram; A. Ougazzaden; J.P. Salvestrini

doi:10.1364/OME.4.001030

Bandgap energy bowing parameter of strained and relaxed InGaN layers

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, J.P. Salvestrini

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Optical Materials Express
DOIs	https://doi.org/10.1364/OME.4.001030
Publication status	Published - 2014

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10.1364/OME.4.001030

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title = "Bandgap energy bowing parameter of strained and relaxed InGaN layers",

author = "G. Orsal and {El Gmili}, Y. and N. Fressengeas and J. Streque and R. Djerboub and T. Moudakir and S. Sundaram and A. Ougazzaden and J.P. Salvestrini",

year = "2014",

doi = "10.1364/OME.4.001030",

language = "Englisch (Amerika)",

journal = "Optical Materials Express",

publisher = "The Optical Society",

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T1 - Bandgap energy bowing parameter of strained and relaxed InGaN layers

AU - Orsal, G.

AU - El Gmili, Y.

AU - Fressengeas, N.

AU - Streque, J.

AU - Djerboub, R.

AU - Moudakir, T.

AU - Sundaram, S.

AU - Ougazzaden, A.

AU - Salvestrini, J.P.

PY - 2014

Y1 - 2014

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U2 - 10.1364/OME.4.001030

DO - 10.1364/OME.4.001030

M3 - Artikel

JO - Optical Materials Express

JF - Optical Materials Express

ER -

Bandgap energy bowing parameter of strained and relaxed InGaN layers

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