Ballistic electron emission microscopy on spin valve structures

R. Heer; J. Smoliner; J. Bornemeier; H. Brückl

doi:10.1063/1.1814423

Ballistic electron emission microscopy on spin valve structures

R. Heer, J. Smoliner, J. Bornemeier, H. Brückl

Research output: Contribution to journal › Article › peer-review

Abstract

Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In detail, Co-Cu-Permalloy-Au layers sputtered onto n-type GaAs bulk substrates were studied. BEEM spectra taken on these multilayers show that magnetocurrents on the order of 600% can be achieved even at room temperature. Small area images (400 nm × 400 nm) show that the spin altering effect of the spin valves is quite homogeneous on the submicron scale. On larger scales, magnetic domains were imaged close to the switching field of the spin valve structure. © 2004 American Institute of Physics.

Original language	English
Pages (from-to)	4388-4390
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1814423
Publication status	Published - 2004
Externally published	Yes

Keywords

Electron emission
Electron microscopy
Magnetic fields
Magnetization
Multilayers
Scanning tunneling microscopy
Semiconducting gallium arsenide
Thermal effects
Transistors
Ultrahigh vacuum
Ballistic electron emission microscopy (BEEM)
Ballistic electron magnetic microscopy (BEMM)
Magnetocurrents
Spin valve structure
Electron tubes

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10.1063/1.1814423

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@article{f7d0893793ad431cb087027d494a744e,

title = "Ballistic electron emission microscopy on spin valve structures",

abstract = "Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In detail, Co-Cu-Permalloy-Au layers sputtered onto n-type GaAs bulk substrates were studied. BEEM spectra taken on these multilayers show that magnetocurrents on the order of 600% can be achieved even at room temperature. Small area images (400 nm × 400 nm) show that the spin altering effect of the spin valves is quite homogeneous on the submicron scale. On larger scales, magnetic domains were imaged close to the switching field of the spin valve structure. {\textcopyright} 2004 American Institute of Physics.",

keywords = "Electron emission, Electron microscopy, Magnetic fields, Magnetization, Multilayers, Scanning tunneling microscopy, Semiconducting gallium arsenide, Thermal effects, Transistors, Ultrahigh vacuum, Ballistic electron emission microscopy (BEEM), Ballistic electron magnetic microscopy (BEMM), Magnetocurrents, Spin valve structure, Electron tubes",

author = "R. Heer and J. Smoliner and J. Bornemeier and H. Br{\"u}ckl",

note = "cited By 7",

year = "2004",

doi = "10.1063/1.1814423",

language = "English",

volume = "85",

pages = "4388--4390",

number = "19",

}

TY - JOUR

T1 - Ballistic electron emission microscopy on spin valve structures

AU - Heer, R.

AU - Smoliner, J.

AU - Bornemeier, J.

AU - Brückl, H.

N1 - cited By 7

PY - 2004

Y1 - 2004

N2 - Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In detail, Co-Cu-Permalloy-Au layers sputtered onto n-type GaAs bulk substrates were studied. BEEM spectra taken on these multilayers show that magnetocurrents on the order of 600% can be achieved even at room temperature. Small area images (400 nm × 400 nm) show that the spin altering effect of the spin valves is quite homogeneous on the submicron scale. On larger scales, magnetic domains were imaged close to the switching field of the spin valve structure. © 2004 American Institute of Physics.

AB - Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In detail, Co-Cu-Permalloy-Au layers sputtered onto n-type GaAs bulk substrates were studied. BEEM spectra taken on these multilayers show that magnetocurrents on the order of 600% can be achieved even at room temperature. Small area images (400 nm × 400 nm) show that the spin altering effect of the spin valves is quite homogeneous on the submicron scale. On larger scales, magnetic domains were imaged close to the switching field of the spin valve structure. © 2004 American Institute of Physics.

KW - Electron emission

KW - Electron microscopy

KW - Magnetic fields

KW - Magnetization

KW - Multilayers

KW - Scanning tunneling microscopy

KW - Semiconducting gallium arsenide

KW - Thermal effects

KW - Transistors

KW - Ultrahigh vacuum

KW - Ballistic electron emission microscopy (BEEM)

KW - Ballistic electron magnetic microscopy (BEMM)

KW - Magnetocurrents

KW - Spin valve structure

KW - Electron tubes

U2 - 10.1063/1.1814423

DO - 10.1063/1.1814423

M3 - Article

SN - 0003-6951

VL - 85

SP - 4388

EP - 4390

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Ballistic electron emission microscopy on spin valve structures

Abstract

Keywords

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