Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

M. Rigato, C. Fleury, B. Schwarz, M. Mergens, S. Bychikhin, W. Simburger, D. Pogany

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2018.2789941
Publication status	Published - 2018

Access to Document

TY - JOUR

T1 - Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

AU - Rigato, M.

AU - Fleury, C.

AU - Schwarz, B.

AU - Mergens, M.

AU - Bychikhin, S.

AU - Simburger, W.

AU - Pogany, D.

PY - 2018

Y1 - 2018

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85040950259&partnerID=MN8TOARS

U2 - 10.1109/TED.2018.2789941

DO - 10.1109/TED.2018.2789941

M3 - Artikel

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -