A TCAD-based methodology to model the site-binding charge at ISFET/electrolyte interfaces

A. Bandiziol, P. Palestri, F. Pittino, D. Esseni, L. Selmi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2015.2464251
Publication status	Published - 2015

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TY - JOUR

T1 - A TCAD-based methodology to model the site-binding charge at ISFET/electrolyte interfaces

AU - Bandiziol, A.

AU - Palestri, P.

AU - Pittino, F.

AU - Esseni, D.

AU - Selmi, L.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84958121977&partnerID=MN8TOARS

U2 - 10.1109/TED.2015.2464251

DO - 10.1109/TED.2015.2464251

M3 - Article

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -