A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

Hao Gao; Domine M.W. Leenaerts; Peter Baltus

doi:10.1109/MWSYM.2019.8700750

A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

Hao Gao, Domine M.W. Leenaerts, Peter Baltus

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Abstract

This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.

Original language	English
Title of host publication	2019 IEEE MTT-S International Microwave Symposium (IMS)
Publisher	IEEE Computer Society
Pages	1306-1308
Number of pages	3
ISBN (Print)	978-1-7281-1310-4
DOIs	https://doi.org/10.1109/MWSYM.2019.8700750
Publication status	Published - 7 Jun 2019
Externally published	Yes
Event	2019 IEEE MTT-S International Microwave Symposium (IMS) - Boston, MA, USA Duration: 2 Jun 2019 → 7 Jun 2019

Conference

Conference	2019 IEEE MTT-S International Microwave Symposium (IMS)
Period	2/06/19 → 7/06/19

Keywords

Rectifiers
Inductors
Sensitivity
CMOS technology
Topology
Voltage measurement
Wireless communication

Access to Document

10.1109/MWSYM.2019.8700750

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8700750

Cite this

@inproceedings{ec45322457654fb3bed5bd3008181fd0,

title = "A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz",

abstract = "This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.",

keywords = "Rectifiers, Inductors, Sensitivity, CMOS technology, Topology, Voltage measurement, Wireless communication",

author = "Hao Gao and Leenaerts, {Domine M.W.} and Peter Baltus",

year = "2019",

month = jun,

day = "7",

doi = "10.1109/MWSYM.2019.8700750",

language = "English",

isbn = "978-1-7281-1310-4",

pages = "1306--1308",

booktitle = "2019 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE Computer Society",

address = "United States",

note = "2019 IEEE MTT-S International Microwave Symposium (IMS) ; Conference date: 02-06-2019 Through 07-06-2019",

}

TY - GEN

T1 - A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

AU - Gao, Hao

AU - Leenaerts, Domine M.W.

AU - Baltus, Peter

PY - 2019/6/7

Y1 - 2019/6/7

N2 - This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.

AB - This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.

KW - Rectifiers

KW - Inductors

KW - Sensitivity

KW - CMOS technology

KW - Topology

KW - Voltage measurement

KW - Wireless communication

UR - https://ieeexplore.ieee.org/document/8700750/

U2 - 10.1109/MWSYM.2019.8700750

DO - 10.1109/MWSYM.2019.8700750

M3 - Conference Paper

SN - 978-1-7281-1310-4

SP - 1306

EP - 1308

BT - 2019 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE Computer Society

T2 - 2019 IEEE MTT-S International Microwave Symposium (IMS)

Y2 - 2 June 2019 through 7 June 2019

ER -

A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this