Thin PZT-based ferroelectric capacitors on flexible silicon for nonvolatile memory applications

Mohamed T Ghoneim; Mohammed A Zidan; Mohammed Y Alnassar; Amir N Hanna; King Abdullah University of Science Technology; Khaled N Salama; Muhammad M Hussain

Thin PZT-based ferroelectric capacitors on flexible silicon for nonvolatile memory applications

Mohamed T Ghoneim, Mohammed A Zidan, Mohammed Y Alnassar, Amir N Hanna, King Abdullah University of Science Technology, Khaled N Salama, Muhammad M Hussain

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	1500045
Seitenumfang	1
Fachzeitschrift	Advanced electronic materials
Jahrgang	1
Ausgabenummer	6
Publikationsstatus	Veröffentlicht - 2015
Extern publiziert	Ja

Dieses zitieren

@article{8eeb1bdd66044ccfbdc7509a5c61fd8d,

title = "Thin PZT-based ferroelectric capacitors on flexible silicon for nonvolatile memory applications",

author = "Ghoneim, {Mohamed T} and Zidan, {Mohammed A} and Alnassar, {Mohammed Y} and Hanna, {Amir N} and Technology, {King Abdullah University of Science} and Salama, {Khaled N} and Hussain, {Muhammad M}",

year = "2015",

language = "English",

volume = "1",

pages = "1500045",

number = "6",

}

TY - JOUR

T1 - Thin PZT-based ferroelectric capacitors on flexible silicon for nonvolatile memory applications

AU - Ghoneim, Mohamed T

AU - Zidan, Mohammed A

AU - Alnassar, Mohammed Y

AU - Hanna, Amir N

AU - Technology, King Abdullah University of Science

AU - Salama, Khaled N

AU - Hussain, Muhammad M

PY - 2015

Y1 - 2015

M3 - Article

VL - 1

SP - 1500045

JO - Advanced electronic materials

JF - Advanced electronic materials

IS - 6

ER -