Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments

Anton V. Lagosh; Vladimir A. Golubkov; Vladimir A. Ilyin; Andrey V. Korlyakov; Victor V. Luchinin

doi:10.1109/RFIT.2018.8524078

Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments

Anton V. Lagosh, Vladimir A. Golubkov, Vladimir A. Ilyin, Andrey V. Korlyakov, Victor V. Luchinin

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.

Originalsprache	Englisch
Titel	2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Seiten	1-3
Seitenumfang	3
DOIs	https://doi.org/10.1109/RFIT.2018.8524078
Publikationsstatus	Veröffentlicht - 17 Aug. 2018
Extern publiziert	Ja
Veranstaltung	2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Melbourne, VIC, Australia Dauer: 15 Aug. 2018 → 17 Aug. 2018

Konferenz

Konferenz	2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Zeitraum	15/08/18 → 17/08/18

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10.1109/RFIT.2018.8524078

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8524078

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@inproceedings{5df4f5a14f7945898bcf3529f76eeb93,

title = "Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments",

abstract = "Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.",

keywords = "Silicon carbide, Radio frequency, Microswitches, Diamond, Micromechanical devices, Cathodes",

author = "Lagosh, {Anton V.} and Golubkov, {Vladimir A.} and Ilyin, {Vladimir A.} and Korlyakov, {Andrey V.} and Luchinin, {Victor V.}",

year = "2018",

month = aug,

day = "17",

doi = "10.1109/RFIT.2018.8524078",

language = "English",

isbn = "978-1-5386-5972-4",

pages = "1--3",

booktitle = "2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)",

note = "2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ; Conference date: 15-08-2018 Through 17-08-2018",

}

Lagosh, AV, Golubkov, VA, Ilyin, VA, Korlyakov, AV & Luchinin, VV 2018, Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments. in 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)., 8524078, S. 1-3, 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 15/08/18. https://doi.org/10.1109/RFIT.2018.8524078

TY - GEN

T1 - Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments

AU - Lagosh, Anton V.

AU - Golubkov, Vladimir A.

AU - Ilyin, Vladimir A.

AU - Korlyakov, Andrey V.

AU - Luchinin, Victor V.

PY - 2018/8/17

Y1 - 2018/8/17

N2 - Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.

AB - Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.

KW - Silicon carbide

KW - Radio frequency

KW - Microswitches

KW - Diamond

KW - Micromechanical devices

KW - Cathodes

UR - https://ieeexplore.ieee.org/document/8524078/

U2 - 10.1109/RFIT.2018.8524078

DO - 10.1109/RFIT.2018.8524078

M3 - Conference Paper

SN - 978-1-5386-5972-4

SP - 1

EP - 3

BT - 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

T2 - 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

Y2 - 15 August 2018 through 17 August 2018

ER -

Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments

Abstract

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