TY - JOUR
T1 - Optical mode conversion based on silicon-on-insulator material Ψ-junction coupler and multimode interferometer
AU - Tu, Dao Duy
AU - Linh, Ho Duc Tam
AU - Nang, University of
AU - Thang, Dao Duy
AU - Dung, Truong Cao
AU - Hung, Nguyen Tan
PY - 2021
Y1 - 2021
N2 - In mode-division multiplexing (MDM) networks, converting modes back and forth between a higher-order mode and a lower-order mode plays a vital role in improving network capacity and flexibility. This paper presents a spatial optical mode conversion supporting three modes based on two Ψ-junction couplers and two multi-mode interference couplers (MMIs). The proposed device can arbitrarily convert a TEi mode to a TEj mode (where i, j = 0, 1, 2) by setting three phase-shifters at 0 or 180 degrees, which are introduced at the Ψ-junction and MMI couplers. Through numerical simulations using the spatial three-dimensions beam propagation method (3D-BPM), the mode converter shows a high conversion efficiency with the insertion loss smaller than 0.2 dB and the crosstalk below −20 dB at the center wavelength of 1.55 μm. The device works effectively in C band, partially in S and L bands within a wideband up to 80 nm. We believe that the proposed device would be a potential platform for applications in MDM networks and photonic integrated circuit systems.
AB - In mode-division multiplexing (MDM) networks, converting modes back and forth between a higher-order mode and a lower-order mode plays a vital role in improving network capacity and flexibility. This paper presents a spatial optical mode conversion supporting three modes based on two Ψ-junction couplers and two multi-mode interference couplers (MMIs). The proposed device can arbitrarily convert a TEi mode to a TEj mode (where i, j = 0, 1, 2) by setting three phase-shifters at 0 or 180 degrees, which are introduced at the Ψ-junction and MMI couplers. Through numerical simulations using the spatial three-dimensions beam propagation method (3D-BPM), the mode converter shows a high conversion efficiency with the insertion loss smaller than 0.2 dB and the crosstalk below −20 dB at the center wavelength of 1.55 μm. The device works effectively in C band, partially in S and L bands within a wideband up to 80 nm. We believe that the proposed device would be a potential platform for applications in MDM networks and photonic integrated circuit systems.
KW - Silicon-on-insulator material
KW - Photonics integrated circuit
KW - Planar lightwave circuits
KW - Multimode interferometer and -junction waveguide
U2 - https://doi.org/10.1016/j.optlastec.2021.107177
DO - https://doi.org/10.1016/j.optlastec.2021.107177
M3 - Article
SN - 0030-3992
VL - 142
SP - 107177
JO - Optics & Laser Technology
JF - Optics & Laser Technology
ER -