TY - JOUR
T1 - Magnetic field effects and k∥-filtering in BEEM on GaAs-AlGaAs resonant tunneling structures
AU - Smoliner, J.
AU - Heer, R.
AU - Strasser, G.
AU - Strahberger, C.
N1 - cited By 0
PY - 2001
Y1 - 2001
N2 - In this work, GaAs-AlGaAs double barrier resonant tunneling diodes (RTDs) are investigated by ballistic electron emission microscopy (BEEM). RTDs grown directly below the sample surface exhibit characteristic steplike features in the BEEM spectrum, whereas for buried RTDs, a linear spectrum is observed. Moreover, the BEEM spectra of sub-surface RTDs show Shubnikov-de Haas-like oscillations in magnetic fields. To investigate the origin of these effects, the BEEM spectra were calculated using a scattering formalism within the framework of a semi-empirical tight binding method. As a main result we found that, independent of the applied bias, only electrons within a narrow k∥ distribution are transferred resonantly through the RTD. Hence, a k∥ filter is established for ballistic electrons close to k∥ = 0. The calculated filter width is consistent with the magnetic field data. © Springer-Verlag 2001.
AB - In this work, GaAs-AlGaAs double barrier resonant tunneling diodes (RTDs) are investigated by ballistic electron emission microscopy (BEEM). RTDs grown directly below the sample surface exhibit characteristic steplike features in the BEEM spectrum, whereas for buried RTDs, a linear spectrum is observed. Moreover, the BEEM spectra of sub-surface RTDs show Shubnikov-de Haas-like oscillations in magnetic fields. To investigate the origin of these effects, the BEEM spectra were calculated using a scattering formalism within the framework of a semi-empirical tight binding method. As a main result we found that, independent of the applied bias, only electrons within a narrow k∥ distribution are transferred resonantly through the RTD. Hence, a k∥ filter is established for ballistic electrons close to k∥ = 0. The calculated filter width is consistent with the magnetic field data. © Springer-Verlag 2001.
KW - Ballistics
KW - Electron emission
KW - Magnetic fields
KW - Resonant tunneling
KW - Semiconducting aluminum compounds
KW - Semiconducting gallium arsenide
KW - Aluminum gallium arsenide
KW - Ballistic electron emission spectroscopy
KW - Resonant tunneling structure
KW - Emission spectroscopy
U2 - 10.1007/s003390100673
DO - 10.1007/s003390100673
M3 - Article
SN - 0947-8396
VL - 72
SP - S233-S237
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 8
ER -