TY - JOUR
T1 - k∥ = 0 filtering effects in ballistic electron transport through sub-surface GaAs-AlGaAs double barrier resonant tunneling structures
AU - Smoliner, J.
AU - Heer, R.
AU - Ploner, G.
AU - Strasser, G.
N1 - cited By 0
PY - 2000
Y1 - 2000
N2 - In ballistic electron emission microscopy on Au-GaAs double barrier resonant tunneling diodes, electrons are transferred across an interface between an area of high and low effective mass and subsequently through a low-dimensional state. Experimentally, the resonant level in the double barrier structure becomes evident as clear step in the ballistic current measured as a function of sample bias. To analyze the spectrum, an extended transfer matrix method, together with the commonly accepted Bell Kaiser model is used. In terms of this model we show that only electrons with zero wave vector parallel to the barriers can be transmitted resonantly.
AB - In ballistic electron emission microscopy on Au-GaAs double barrier resonant tunneling diodes, electrons are transferred across an interface between an area of high and low effective mass and subsequently through a low-dimensional state. Experimentally, the resonant level in the double barrier structure becomes evident as clear step in the ballistic current measured as a function of sample bias. To analyze the spectrum, an extended transfer matrix method, together with the commonly accepted Bell Kaiser model is used. In terms of this model we show that only electrons with zero wave vector parallel to the barriers can be transmitted resonantly.
KW - Electric currents
KW - Electron emission
KW - Electron microscopes
KW - Electron transport properties
KW - Gold
KW - Interfaces (materials)
KW - Mathematical models
KW - Matrix algebra
KW - Semiconducting aluminum compounds
KW - Semiconducting gallium arsenide
KW - Semiconductor metal boundaries
KW - Ballistic electron transport
KW - Double barrier resonant tunneling structures
KW - Tunnel diodes
U2 - 10.1016/S1386-9477(99)00172-1
DO - 10.1016/S1386-9477(99)00172-1
M3 - Article
VL - 6
SP - 339
EP - 342
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
IS - 1
ER -