Abstract
Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons.
Originalsprache | Englisch |
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Seiten (von - bis) | 436-440 |
Seitenumfang | 5 |
Fachzeitschrift | Technical Physics |
Jahrgang | 62 |
Ausgabenummer | 3 |
DOIs | |
Publikationsstatus | Veröffentlicht - 1 März 2017 |