ESD Behavior of RF Switches and Importance of System Efficient ESD Design

Seyed Mostafa Mousavi; Emil Tauber; Amin Pak; David Pommerenke; Daryl Beetner; Ketan Shringarpure; Benjamin Lee; Warwick Ka Kui Wong

doi:10.1109/EMCSIPI50001.2023.10241687

ESD Behavior of RF Switches and Importance of System Efficient ESD Design

Seyed Mostafa Mousavi, Emil Tauber, Amin Pak, David Pommerenke, Daryl Beetner, Ketan Shringarpure, Benjamin Lee, Warwick Ka Kui Wong

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

RF switches are typically used in the RF front-end of portable devices such as antenna or matching tuners to improve the RF link performance. They are usually the first active devices after the antenna and are vulnerable to primary or secondary ESD discharges to the antennas. This paper investigates the ESD behavior of one of the high frequency switches used in the RF-front-end of portable devices and expresses the importance of the ESD pulse that passes through the switch and reaches the next stage in the RF path, possibly damaging the next stage

Originalsprache	Englisch
Titel	2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)
Seiten	504-509
Seitenumfang	6
DOIs	https://doi.org/10.1109/EMCSIPI50001.2023.10241687
Publikationsstatus	Veröffentlicht - 4 Aug. 2023
Extern publiziert	Ja
Veranstaltung	2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI) - Grand Rapids, MI, USA Dauer: 29 Juli 2023 → 4 Aug. 2023

Konferenz

Konferenz	2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)
Zeitraum	29/07/23 → 4/08/23

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10.1109/EMCSIPI50001.2023.10241687

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10241687

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@inproceedings{1b54495dd8be4f41af3f681a35250958,

title = "ESD Behavior of RF Switches and Importance of System Efficient ESD Design",

abstract = "RF switches are typically used in the RF front-end of portable devices such as antenna or matching tuners to improve the RF link performance. They are usually the first active devices after the antenna and are vulnerable to primary or secondary ESD discharges to the antennas. This paper investigates the ESD behavior of one of the high frequency switches used in the RF-front-end of portable devices and expresses the importance of the ESD pulse that passes through the switch and reaches the next stage in the RF path, possibly damaging the next stage",

keywords = "Radio frequency, Integrated circuits, Performance evaluation, Tuners, Switches, Electrostatic discharges, Discharges (electric)",

author = "Mousavi, {Seyed Mostafa} and Emil Tauber and Amin Pak and David Pommerenke and Daryl Beetner and Ketan Shringarpure and Benjamin Lee and Wong, {Warwick Ka Kui}",

year = "2023",

month = aug,

day = "4",

doi = "10.1109/EMCSIPI50001.2023.10241687",

language = "English",

isbn = "979-8-3503-0977-5",

pages = "504--509",

booktitle = "2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)",

note = "2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI) ; Conference date: 29-07-2023 Through 04-08-2023",

}

Mousavi, SM, Tauber, E, Pak, A, Pommerenke, D, Beetner, D, Shringarpure, K, Lee, B & Wong, WKK 2023, ESD Behavior of RF Switches and Importance of System Efficient ESD Design. in 2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)., 10241687, S. 504-509, 2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI), 29/07/23. https://doi.org/10.1109/EMCSIPI50001.2023.10241687

TY - GEN

T1 - ESD Behavior of RF Switches and Importance of System Efficient ESD Design

AU - Mousavi, Seyed Mostafa

AU - Tauber, Emil

AU - Pak, Amin

AU - Pommerenke, David

AU - Beetner, Daryl

AU - Shringarpure, Ketan

AU - Lee, Benjamin

AU - Wong, Warwick Ka Kui

PY - 2023/8/4

Y1 - 2023/8/4

N2 - RF switches are typically used in the RF front-end of portable devices such as antenna or matching tuners to improve the RF link performance. They are usually the first active devices after the antenna and are vulnerable to primary or secondary ESD discharges to the antennas. This paper investigates the ESD behavior of one of the high frequency switches used in the RF-front-end of portable devices and expresses the importance of the ESD pulse that passes through the switch and reaches the next stage in the RF path, possibly damaging the next stage

AB - RF switches are typically used in the RF front-end of portable devices such as antenna or matching tuners to improve the RF link performance. They are usually the first active devices after the antenna and are vulnerable to primary or secondary ESD discharges to the antennas. This paper investigates the ESD behavior of one of the high frequency switches used in the RF-front-end of portable devices and expresses the importance of the ESD pulse that passes through the switch and reaches the next stage in the RF path, possibly damaging the next stage

KW - Radio frequency

KW - Integrated circuits

KW - Performance evaluation

KW - Tuners

KW - Switches

KW - Electrostatic discharges

KW - Discharges (electric)

UR - https://ieeexplore.ieee.org/document/10241687/

U2 - 10.1109/EMCSIPI50001.2023.10241687

DO - 10.1109/EMCSIPI50001.2023.10241687

M3 - Conference Paper

SN - 979-8-3503-0977-5

SP - 504

EP - 509

BT - 2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)

T2 - 2023 IEEE Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMC+SIPI)

Y2 - 29 July 2023 through 4 August 2023

ER -

ESD Behavior of RF Switches and Importance of System Efficient ESD Design

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