Abstract
The impact of SF6 plasma treatment on the GaN cap-layer of an AlGaN/GaN based HEMT heterostructure was studied. Once the test Metal to Semiconductor contacts are formed on the surface, the plasma treatment has been done. A significant increase of the breakdown voltage between test contacts is obtained. It is
demonstrated that Ga–O bound is replaced with a stronger one Ga–F on the GaN surface as a result of such
SF6 plasma treatment. A pattern similar to the one being obtained while change of cap-layer polarity from
Ga-faced to the mixed polarity or possibly even to the N-faced is observed, which is defined by XPS spectra of
the Valence Band Maximum.
demonstrated that Ga–O bound is replaced with a stronger one Ga–F on the GaN surface as a result of such
SF6 plasma treatment. A pattern similar to the one being obtained while change of cap-layer polarity from
Ga-faced to the mixed polarity or possibly even to the N-faced is observed, which is defined by XPS spectra of
the Valence Band Maximum.
| Titel in Übersetzung | Study of SF6 plasma treatment of GaN-НЕМТ structures |
|---|---|
| Originalsprache | Russisch |
| Seiten (von - bis) | 335-339 |
| Seitenumfang | 5 |
| Fachzeitschrift | Uspekhi Prikladnoi Fiziki |
| Jahrgang | 5 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 17 Mai 2017 |