Abstract
The effect of plasma treatment in the N2 medium on the HEMT characteristics was studied. It is shown
that the drop in saturation currents of a transistor as a result of plasma processing by high-energy ions
can be associated with the formation of a transistor structure of charge scattering centers on the GaN
surface of the cap layer, which lead to Coulomb scattering of carriers in the 2DEG channel, which
leads to a drop in the saturation current of the devices.
that the drop in saturation currents of a transistor as a result of plasma processing by high-energy ions
can be associated with the formation of a transistor structure of charge scattering centers on the GaN
surface of the cap layer, which lead to Coulomb scattering of carriers in the 2DEG channel, which
leads to a drop in the saturation current of the devices.
Titel in Übersetzung | Influence of ion energy when exposed to nitrogen plasma on the constant saturation currents of HEMT transistors based on group III nitrides |
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Originalsprache | Russisch |
Seiten (von - bis) | 82-85 |
Seitenumfang | 4 |
Fachzeitschrift | Uspekhi Prikladnoi Fiziki |
Jahrgang | 5 |
Publikationsstatus | Veröffentlicht - 2018 |