Abstract
The invention provides a sectional mass block stressed concentration structural micro-pressure sensor chip and a preparation method. The sensor chip comprises a film arranged on a base; four shallow grooves are distributed along the side edge of the upper part of the film; four pressure sensitive resistance strips are arranged between the end parts of two adjacent shallow grooves and are connected to form a semi-open ring wheatstone bridge through metal leads; four bulges are distributed at the side edge of the lower part of the film and connected with the base; four mass blocks and the bulges are arranged at intervals; the bulges are connected to the film; a sectional mass block stress concentration structure is formed through the mass blocks, the bulges and gaps between the mass blocks and the bulges. The preparation method comprises the steps of manufacturing the pressure sensitive strips for a cleaned SOI silicon chip; obtaining P type heavy-doped silicon as an ohm contact area; manufacturing the shallow grooves; manufacturing a rear cavity structural layer of a sensor; bonding the base with overload preventing glass. The sensor chip has the characteristics of being high in reliability, high in precision, high in linearity, and high in dynamic features; in addition, the processing is convenient, and the cost is small.
| Translated title of the contribution | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
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| Original language | Chinese (Simplified) |
| Patent number | CN104748904B |
| Publication status | Published - 2015 |