Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing

M. De Biasio, M. Kraft, E. Geier, B. Goller, Ch. Bergmann, R. Esteve, M. Cerezuela-Barreto, D. Lewke, M. Schellenberger, M. Roesner

Research output: Conference proceeding/Chapter in Book/Report/Conference Paperpeer-review

Original languageEnglish
Title of host publicationNext-Generation Spectroscopic Technologies X
EditorsMark A. Druy, Richard A. Crocombe, Steven M. Barnett, Luisa T. Profeta
Pages133 - 140
Volume10210
DOIs
Publication statusPublished - 2017

Keywords

  • Raman spectroscopy
  • semiconductor
  • stress
  • silicon
  • silicon carbide

Cite this