Probing of superlattice minibands by ballistic electron emission microscopy

C. Eder; J. Smoliner; R. Heer; G. Strasser; E. Gornik

doi:10.1016/S1386-9477(98)00173-8

Probing of superlattice minibands by ballistic electron emission microscopy

C. Eder, J. Smoliner, R. Heer, G. Strasser, E. Gornik

Research output: Contribution to journal › Article › peer-review

Abstract

Ballistic electron emission microscopy (BEEM) has been used to study MBE grown Al0.4Ga0.6As/GaAs superlattice structures at variable temperature. The influence of the superlattice miniband manifests itself even at 300 K by a considerable lowering of the collector current threshold voltage compared to the threshold measured on samples with a thick Al0.4Ga0.6As barrier. On the other hand, reference samples with neither a superlattice nor a barrier give low thresholds, as expected for a Au/GaAs Schottky barrier. The temperature dependence of the threshold for the superlattice sample agrees excellently with self-consistent Schrödinger-Poisson calculations of the structure. © 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	850-853
Number of pages	4
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00173-8
Publication status	Published - 1998
Externally published	Yes

Access to Document

10.1016/S1386-9477(98)00173-8

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0007266379&doi=10.1016%2fS1386-9477%2898%2900173-8&partnerID=40&md5=338c2537974776dbdd89365b054fe2eb

Cite this

@article{7d2bdc9579a04135b74f49a11d4ae0c1,

title = "Probing of superlattice minibands by ballistic electron emission microscopy",

abstract = "Ballistic electron emission microscopy (BEEM) has been used to study MBE grown Al0.4Ga0.6As/GaAs superlattice structures at variable temperature. The influence of the superlattice miniband manifests itself even at 300 K by a considerable lowering of the collector current threshold voltage compared to the threshold measured on samples with a thick Al0.4Ga0.6As barrier. On the other hand, reference samples with neither a superlattice nor a barrier give low thresholds, as expected for a Au/GaAs Schottky barrier. The temperature dependence of the threshold for the superlattice sample agrees excellently with self-consistent Schr{\"o}dinger-Poisson calculations of the structure. {\textcopyright} 1998 Elsevier Science B.V. All rights reserved.",

author = "C. Eder and J. Smoliner and R. Heer and G. Strasser and E. Gornik",

note = "cited By 10",

year = "1998",

doi = "10.1016/S1386-9477(98)00173-8",

language = "English",

volume = "2",

pages = "850--853",

number = "1-4",

}

TY - JOUR

T1 - Probing of superlattice minibands by ballistic electron emission microscopy

AU - Eder, C.

AU - Smoliner, J.

AU - Heer, R.

AU - Strasser, G.

AU - Gornik, E.

N1 - cited By 10

PY - 1998

Y1 - 1998

N2 - Ballistic electron emission microscopy (BEEM) has been used to study MBE grown Al0.4Ga0.6As/GaAs superlattice structures at variable temperature. The influence of the superlattice miniband manifests itself even at 300 K by a considerable lowering of the collector current threshold voltage compared to the threshold measured on samples with a thick Al0.4Ga0.6As barrier. On the other hand, reference samples with neither a superlattice nor a barrier give low thresholds, as expected for a Au/GaAs Schottky barrier. The temperature dependence of the threshold for the superlattice sample agrees excellently with self-consistent Schrödinger-Poisson calculations of the structure. © 1998 Elsevier Science B.V. All rights reserved.

AB - Ballistic electron emission microscopy (BEEM) has been used to study MBE grown Al0.4Ga0.6As/GaAs superlattice structures at variable temperature. The influence of the superlattice miniband manifests itself even at 300 K by a considerable lowering of the collector current threshold voltage compared to the threshold measured on samples with a thick Al0.4Ga0.6As barrier. On the other hand, reference samples with neither a superlattice nor a barrier give low thresholds, as expected for a Au/GaAs Schottky barrier. The temperature dependence of the threshold for the superlattice sample agrees excellently with self-consistent Schrödinger-Poisson calculations of the structure. © 1998 Elsevier Science B.V. All rights reserved.

U2 - 10.1016/S1386-9477(98)00173-8

DO - 10.1016/S1386-9477(98)00173-8

M3 - Article

VL - 2

SP - 850

EP - 853

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

IS - 1-4

ER -

Probing of superlattice minibands by ballistic electron emission microscopy

Abstract

Access to Document

Fingerprint

Cite this