Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

M. De Biasio; M. Kraft; M. Schultz; B. Goller; D. Sternig; R. Esteve; M. Roesner

doi:10.1117/12.2259930

Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

M. De Biasio, M. Kraft, M. Schultz, B. Goller, D. Sternig, R. Esteve, M. Roesner

Photonic Systems (PHOS)

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Original language	English
Title of host publication	Next-Generation Spectroscopic Technologies X
Editors	Mark A. Druy, Richard A. Crocombe, Steven M. Barnett, Luisa T. Profeta
Pages	168 - 173
Volume	10210
DOIs	https://doi.org/10.1117/12.2259930
Publication status	Published - 2017

Keywords

Raman spectroscopy
semiconductor
silicon
silicon carbide
stress

Access to Document

10.1117/12.2259930

https://doi.org/10.1117/12.2259930

Cite this

Biasio, M. D., Kraft, M., Schultz, M., Goller, B., Sternig, D., Esteve, R., & Roesner, M. (2017). Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing. In M. A. Druy, R. A. Crocombe, S. M. Barnett, & L. T. Profeta (Eds.), Next-Generation Spectroscopic Technologies X (Vol. 10210, pp. 168 - 173) https://doi.org/10.1117/12.2259930

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title = "Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing",

keywords = "Raman spectroscopy, semiconductor, silicon, silicon carbide, stress",

author = "Biasio, {M. De} and M. Kraft and M. Schultz and B. Goller and D. Sternig and R. Esteve and M. Roesner",

year = "2017",

doi = "10.1117/12.2259930",

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volume = "10210",

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Biasio, MD, Kraft, M, Schultz, M, Goller, B, Sternig, D, Esteve, R & Roesner, M 2017, Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing. in MA Druy, RA Crocombe, SM Barnett & LT Profeta (eds), Next-Generation Spectroscopic Technologies X. vol. 10210, pp. 168 - 173. https://doi.org/10.1117/12.2259930

Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing. / Biasio, M. De; Kraft, M.; Schultz, M. et al.
Next-Generation Spectroscopic Technologies X. ed. / Mark A. Druy; Richard A. Crocombe; Steven M. Barnett; Luisa T. Profeta. Vol. 10210 2017. p. 168 - 173.

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

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T1 - Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

AU - Biasio, M. De

AU - Kraft, M.

AU - Schultz, M.

AU - Goller, B.

AU - Sternig, D.

AU - Esteve, R.

AU - Roesner, M.

PY - 2017

Y1 - 2017

KW - Raman spectroscopy

KW - semiconductor

KW - silicon

KW - silicon carbide

KW - stress

U2 - 10.1117/12.2259930

DO - 10.1117/12.2259930

M3 - Conference Paper

VL - 10210

SP - 168

EP - 173

BT - Next-Generation Spectroscopic Technologies X

A2 - Druy, Mark A.

A2 - Crocombe, Richard A.

A2 - Barnett, Steven M.

A2 - Profeta, Luisa T.

ER -