Abstract
Consideration is given to inductively coupled BCl3-plasma (ICP) treatment of the GaN surface,
which is a promising technique to get the low resistance ohmic contacts in GaN-based transistors. In
some case, BCl3 plasma treatment results in ohmic contact degradation, because BClx radicals tend
to form a polymer thin film BxCly on the surface. In present work the mechanisms of BCl3 plasma
interaction with GaN surface are considered. Threshold ion energies of reactive ion etching for polymer BxCly and semiconductor GaN, respectively, are estimated using numerical plasma modeling.
It has been demonstrated that a plasma treatment regime without polymer deposition and reac etching is possible, when an ion energy is in the range 3260 eV.
which is a promising technique to get the low resistance ohmic contacts in GaN-based transistors. In
some case, BCl3 plasma treatment results in ohmic contact degradation, because BClx radicals tend
to form a polymer thin film BxCly on the surface. In present work the mechanisms of BCl3 plasma
interaction with GaN surface are considered. Threshold ion energies of reactive ion etching for polymer BxCly and semiconductor GaN, respectively, are estimated using numerical plasma modeling.
It has been demonstrated that a plasma treatment regime without polymer deposition and reac etching is possible, when an ion energy is in the range 3260 eV.
| Translated title of the contribution | Mechanisms of inductively coupled BCl3-plasma interaction with the GaN surface |
|---|---|
| Original language | Russian |
| Pages (from-to) | 381-388 |
| Number of pages | 7 |
| Journal | Uspekhi Prikladnoi Fiziki |
| Volume | 6 |
| Issue number | 5 |
| Publication status | Published - 17 Aug 2018 |