TY - JOUR
T1 - K=0 filtering in resonant-tunneling processes between materials of different effective electron mass
AU - Smoliner, J.
AU - Heer, R.
AU - Strasser, G.
N1 - cited By 13
PY - 1999
Y1 - 1999
N2 - If electrons are transferred across an interface between an area of high and low effective mass, parallel momentum conservation leads to electron refraction effects, which are evident on InAs-AlSb resonant tunneling diodes and also, e.g., in ballistic electron emission microscopy. In ballistic electron emission microscopy on Au-GaAs Schottky diodes, the difference in effective mass is especially large and as a consequence of electron refraction, the spatial and energetic resolution for structures buried below the metal-semiconductor interface are considerably reduced. If a resonant (GaAs-AlxGa1-xAs) tunneling structure is grown directly below the sample surface, however, only electrons with zero wave vector parallel to the barriers can be transmitted resonantly. As a consequence, the energetic and spatial resolution is expected to be enhanced for buried structures. Moreover, the underlying principle can be applied to devices in order to fabricate electron injector structures with narrow energy distribution both in E⊥ and E. © 1999 The American Physical Society.
AB - If electrons are transferred across an interface between an area of high and low effective mass, parallel momentum conservation leads to electron refraction effects, which are evident on InAs-AlSb resonant tunneling diodes and also, e.g., in ballistic electron emission microscopy. In ballistic electron emission microscopy on Au-GaAs Schottky diodes, the difference in effective mass is especially large and as a consequence of electron refraction, the spatial and energetic resolution for structures buried below the metal-semiconductor interface are considerably reduced. If a resonant (GaAs-AlxGa1-xAs) tunneling structure is grown directly below the sample surface, however, only electrons with zero wave vector parallel to the barriers can be transmitted resonantly. As a consequence, the energetic and spatial resolution is expected to be enhanced for buried structures. Moreover, the underlying principle can be applied to devices in order to fabricate electron injector structures with narrow energy distribution both in E⊥ and E. © 1999 The American Physical Society.
U2 - 10.1103/PhysRevB.60.R5137
DO - 10.1103/PhysRevB.60.R5137
M3 - Article
SN - 1098-0121
VL - 60
SP - R5137-R5140
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
ER -