Abstract
The effect of plasma treatment in the N2 medium on the HEMT characteristics was studied. It is shown
that the drop in saturation currents of a transistor as a result of plasma processing by high-energy ions
can be associated with the formation of a transistor structure of charge scattering centers on the GaN
surface of the cap layer, which lead to Coulomb scattering of carriers in the 2DEG channel, which
leads to a drop in the saturation current of the devices.
that the drop in saturation currents of a transistor as a result of plasma processing by high-energy ions
can be associated with the formation of a transistor structure of charge scattering centers on the GaN
surface of the cap layer, which lead to Coulomb scattering of carriers in the 2DEG channel, which
leads to a drop in the saturation current of the devices.
| Translated title of the contribution | Influence of ion energy when exposed to nitrogen plasma on the constant saturation currents of HEMT transistors based on group III nitrides |
|---|---|
| Original language | Russian |
| Pages (from-to) | 82-85 |
| Number of pages | 4 |
| Journal | Uspekhi Prikladnoi Fiziki |
| Volume | 5 |
| Publication status | Published - 2018 |
Keywords
- N2 plasma
- GaN HEMT