Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates

Fazel Parsapour; Vladimir Pashchenko; Stefan Mertin; Cosmin Sandu; Nicolas Kurz; Pascal Nicolay; Paul Muralt

doi:10.1109/ULTSYM.2017.8091524

Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates

Fazel Parsapour, Vladimir Pashchenko, Stefan Mertin, Cosmin Sandu, Nicolas Kurz, Pascal Nicolay, Paul Muralt

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Abstract

It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN deposition, as it leads to oxidation of the AlN surface. This issue was studied with high resolution TEM and electron diffraction. The formed oxide layer disturbed a lot the epitaxial growth, leading to additional grain orientations. A mild RF etching step introduced before AlScN deposition was able to remove the oxide layer, and allowed for growing Al_0.84Sc_0.16N in local epitaxy on AlN, as shown by Hyper map EDX images. The resulting AlScN films show a pure (0001) texture. Double beam laser interferometry and finite element modeling were used to determine d_{33, f} of both layers together as 6.6 pm/V, and of 6.85 pm/V for AlScN alone when using the standard value of 3.9 pm/V for pure AlN. At the same time, the relative dielectric constant of Al_0.84Sc_0.16N was determined as 14.1.

Original language	English
Title of host publication	2017 IEEE International Ultrasonics Symposium (IUS)
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2017.8091524
Publication status	Published - 9 Sept 2017
Externally published	Yes
Event	2017 IEEE International Ultrasonics Symposium (IUS) - Washington, DC, USA Duration: 6 Sept 2017 → 9 Sept 2017

Conference

Conference	2017 IEEE International Ultrasonics Symposium (IUS)
Period	6/09/17 → 9/09/17

Keywords

Aluminum nitride
III-V semiconductor materials
Resonators
Electrodes
Radio frequency
Epitaxial growth
Cleaning

Access to Document

10.1109/ULTSYM.2017.8091524

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8091524

Cite this

@inproceedings{6b0fd2c20b6a4abab46971f219612253,

title = "Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates",

abstract = "It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN deposition, as it leads to oxidation of the AlN surface. This issue was studied with high resolution TEM and electron diffraction. The formed oxide layer disturbed a lot the epitaxial growth, leading to additional grain orientations. A mild RF etching step introduced before AlScN deposition was able to remove the oxide layer, and allowed for growing Al0.84Sc0.16N in local epitaxy on AlN, as shown by Hyper map EDX images. The resulting AlScN films show a pure (0001) texture. Double beam laser interferometry and finite element modeling were used to determine d33, f of both layers together as 6.6 pm/V, and of 6.85 pm/V for AlScN alone when using the standard value of 3.9 pm/V for pure AlN. At the same time, the relative dielectric constant of Al0.84Sc0.16N was determined as 14.1.",

keywords = "Aluminum nitride, III-V semiconductor materials, Resonators, Electrodes, Radio frequency, Epitaxial growth, Cleaning",

author = "Fazel Parsapour and Vladimir Pashchenko and Stefan Mertin and Cosmin Sandu and Nicolas Kurz and Pascal Nicolay and Paul Muralt",

year = "2017",

month = sep,

day = "9",

doi = "10.1109/ULTSYM.2017.8091524",

language = "English",

isbn = "978-1-5386-3384-7",

pages = "1--4",

booktitle = "2017 IEEE International Ultrasonics Symposium (IUS)",

note = "2017 IEEE International Ultrasonics Symposium (IUS) ; Conference date: 06-09-2017 Through 09-09-2017",

}

TY - GEN

T1 - Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates

AU - Parsapour, Fazel

AU - Pashchenko, Vladimir

AU - Mertin, Stefan

AU - Sandu, Cosmin

AU - Kurz, Nicolas

AU - Nicolay, Pascal

AU - Muralt, Paul

PY - 2017/9/9

Y1 - 2017/9/9

N2 - It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN deposition, as it leads to oxidation of the AlN surface. This issue was studied with high resolution TEM and electron diffraction. The formed oxide layer disturbed a lot the epitaxial growth, leading to additional grain orientations. A mild RF etching step introduced before AlScN deposition was able to remove the oxide layer, and allowed for growing Al0.84Sc0.16N in local epitaxy on AlN, as shown by Hyper map EDX images. The resulting AlScN films show a pure (0001) texture. Double beam laser interferometry and finite element modeling were used to determine d33, f of both layers together as 6.6 pm/V, and of 6.85 pm/V for AlScN alone when using the standard value of 3.9 pm/V for pure AlN. At the same time, the relative dielectric constant of Al0.84Sc0.16N was determined as 14.1.

AB - It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN deposition, as it leads to oxidation of the AlN surface. This issue was studied with high resolution TEM and electron diffraction. The formed oxide layer disturbed a lot the epitaxial growth, leading to additional grain orientations. A mild RF etching step introduced before AlScN deposition was able to remove the oxide layer, and allowed for growing Al0.84Sc0.16N in local epitaxy on AlN, as shown by Hyper map EDX images. The resulting AlScN films show a pure (0001) texture. Double beam laser interferometry and finite element modeling were used to determine d33, f of both layers together as 6.6 pm/V, and of 6.85 pm/V for AlScN alone when using the standard value of 3.9 pm/V for pure AlN. At the same time, the relative dielectric constant of Al0.84Sc0.16N was determined as 14.1.

KW - Aluminum nitride

KW - III-V semiconductor materials

KW - Resonators

KW - Electrodes

KW - Radio frequency

KW - Epitaxial growth

KW - Cleaning

UR - https://ieeexplore.ieee.org/document/8091524/

U2 - 10.1109/ULTSYM.2017.8091524

DO - 10.1109/ULTSYM.2017.8091524

M3 - Conference Paper

SN - 978-1-5386-3384-7

SP - 1

EP - 4

BT - 2017 IEEE International Ultrasonics Symposium (IUS)

T2 - 2017 IEEE International Ultrasonics Symposium (IUS)

Y2 - 6 September 2017 through 9 September 2017

ER -

Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates

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