Abstract
Spectral diffusion can lead to considerable broadening of the line width of nitride quantum dots. Here, InGaN quantum dots grown on a nonpolar plane were shown to exhibit a decreased spectral diffusion rate compared to polar nitride dots. A robust intensity correlation method was used to measure the spectral diffusion rate of six quantum dots. A maximum spectral diffusion time of 1170 ± 50 ns was found. An increase of the rate with increasing power was observed. The decreased internal field leads to a lifetime for the nonpolar dots that is shorter than that for polar dots; the important ratio of spectral diffusion time to lifetime is more favorable for nonpolar quantum dots, thereby increasing the chances of generating indistinguishable photons.
Original language | English |
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Pages (from-to) | 275-281 |
Number of pages | 7 |
Journal | ACS Photonics |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Dec 2021 |
Externally published | Yes |
Keywords
- quantum dots
- Diffusion
- Nitrides
- Defeccts