Compact broadband ( O, E, S, C, L & U bands) silicon TE-pass polarizer based on ridge waveguide adiabatic S-bends

Humaira Zafar, Yanfen Zhai, JUAN E. VILLEGAS, FLORENT RAVAUX

Research output: Contribution to journalArticlepeer-review

Abstract

A compact, ultra-broadband and high-performance silicon TE-pass polarizer is
proposed and demonstrated experimentally. It is based on partially-etched (ridge) waveguide
adiabatic S-bends, input/output tapers and side gratings on a silicon-on-insulator (SOI) platform.
A compact footprint and weak back reflections are obtained due to the bent waveguide and the
tapers, respectively. An extremely high extinction ratio is achieved by scattering the undesired
light in the slab section using the side gratings. The 3D FDTD simulations show a TE loss less
than 0.3 dB and an extinction ratio greater than 30 dB over a 500 nm wavelength range (1200 nm
to 1700 nm). Measured results show a high TM loss (> 35 dB) and a low TE insertion loss (
1.5 dB), over a 200 nm wavelength range (1450 nm to 1650 nm). The measured TE loss is
0.6 dB at a communication wavelength of 1550 nm. The footprint of the optimized design is
65 µm × 20 µm.
Original languageEnglish
JournalOptics Express
DOIs
Publication statusPublished - 14 Mar 2022
Externally publishedYes

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