Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Zhe Chen, Hao Gao, Dusan Milosevic, Peter Baltus

Research output: Conference proceeding/Chapter in Book/Report/Conference Paperpeer-review


This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 μm SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.
Original languageEnglish
Title of host publication2020 IEEE Asia-Pacific Microwave Conference (APMC)
PublisherIEEE Computer Society
Number of pages3
ISBN (Print)978-1-7281-6963-7
Publication statusPublished - 11 Dec 2020
Event2020 IEEE Asia-Pacific Microwave Conference (APMC) - Hong Kong, Hong Kong
Duration: 8 Dec 202011 Dec 2020


Conference2020 IEEE Asia-Pacific Microwave Conference (APMC)


  • Low-noise amplifiers
  • Semiconductor device measurement
  • 5G mobile communication
  • BiCMOS integrated circuits
  • System-on-chip
  • Gain
  • Silicon germanium


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