An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC

C. A. Fisher, R. Esteve, S. Doering, M. Roesner, M. De Biasio, M. Kraft, W. Schustereder, R. Rupp

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Original language	Undefined/Unknown
Title of host publication	2016 European Conference on Silicon Carbide Related Materials (ECSCRM)
Pages	1-1
Number of pages	1
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.411
Publication status	Published - 2016

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title = "An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC",

author = "Fisher, {C. A.} and R. Esteve and S. Doering and M. Roesner and {De Biasio}, M. and M. Kraft and W. Schustereder and R. Rupp",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.897.411",

language = "undefiniert/unbekannt",

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booktitle = "2016 European Conference on Silicon Carbide Related Materials (ECSCRM)",

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T1 - An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC

AU - Fisher, C. A.

AU - Esteve, R.

AU - Doering, S.

AU - Roesner, M.

AU - De Biasio, M.

AU - Kraft, M.

AU - Schustereder, W.

AU - Rupp, R.

PY - 2016

Y1 - 2016

U2 - 10.4028/www.scientific.net/MSF.897.411

DO - 10.4028/www.scientific.net/MSF.897.411

M3 - Konferenzartikel

SP - 1

EP - 1

BT - 2016 European Conference on Silicon Carbide Related Materials (ECSCRM)

ER -