Abstract
A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method, sensor chip includes the thin film being provided with the middle part of substrate, four embossment islands are distributed along thin film top edge, and be connected with substrate by four embossment roots, four varistor bars are arranged in the upper surface of embossment root, varistor bar is interconnected to semi-loop Wheatstone bridge by metal lead wire, and four projections are uniformly distributed along thin film lower edge, and are connected with substrate；Four are separated with distance between mass and projection, projection is connected on thin film, and preparation method is the soi wafer cleaned using HF solution, and high-temperature oxydation is carried out to soi wafer, make varistor bar, obtain ohmic contact regions, then make metal lead wire and pad；Photoetching is carried out again, forms four embossment islands with four embossment roots and the back cavity structure layer of sensor；Finally backside of substrate is bonded with antioverloading glass, the present invention have sensitivity height, the good linearity, high precision, good dynamic property the features such as.
| Translated title of the contribution | A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method |
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| Original language | Chinese (Simplified) |
| Patent number | CN104764547B |
| Publication status | Published - 2015 |