A highly transmittive semiconductor base for ballistic electron emission microscopy

R. Heer; J. Smoliner; G. Strasser; E. Gornik

doi:10.1063/1.122132

A highly transmittive semiconductor base for ballistic electron emission microscopy

R. Heer, J. Smoliner, G. Strasser, E. Gornik

Research output: Contribution to journal › Article › peer-review

Abstract

Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the unique possibility of probing subsurface quantum states. To improve the spectroscopic sensitivity, it is important to increase the amount of electrons, which are able to penetrate into the sample. In this work, we show that the transmission coefficient and the attenuation length of the base layer can be enhanced by more than one order of magnitude, if the commonly used thin metal film is replaced by a molecular beam epitaxy grown InAs layer. At low temperatures (T=100K), a passivated InAs layer yields an attenuation length in the order of 70-90 nm instead of 5 nm obtained on Au films. © 1998 American Institute of Physics.

Original language	English
Pages (from-to)	1218-1220
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122132
Publication status	Published - 1998
Externally published	Yes

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title = "A highly transmittive semiconductor base for ballistic electron emission microscopy",

abstract = "Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the unique possibility of probing subsurface quantum states. To improve the spectroscopic sensitivity, it is important to increase the amount of electrons, which are able to penetrate into the sample. In this work, we show that the transmission coefficient and the attenuation length of the base layer can be enhanced by more than one order of magnitude, if the commonly used thin metal film is replaced by a molecular beam epitaxy grown InAs layer. At low temperatures (T=100K), a passivated InAs layer yields an attenuation length in the order of 70-90 nm instead of 5 nm obtained on Au films. {\textcopyright} 1998 American Institute of Physics.",

author = "R. Heer and J. Smoliner and G. Strasser and E. Gornik",

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T1 - A highly transmittive semiconductor base for ballistic electron emission microscopy

AU - Heer, R.

AU - Smoliner, J.

AU - Strasser, G.

AU - Gornik, E.

N1 - cited By 13

PY - 1998

Y1 - 1998

N2 - Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the unique possibility of probing subsurface quantum states. To improve the spectroscopic sensitivity, it is important to increase the amount of electrons, which are able to penetrate into the sample. In this work, we show that the transmission coefficient and the attenuation length of the base layer can be enhanced by more than one order of magnitude, if the commonly used thin metal film is replaced by a molecular beam epitaxy grown InAs layer. At low temperatures (T=100K), a passivated InAs layer yields an attenuation length in the order of 70-90 nm instead of 5 nm obtained on Au films. © 1998 American Institute of Physics.

AB - Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the unique possibility of probing subsurface quantum states. To improve the spectroscopic sensitivity, it is important to increase the amount of electrons, which are able to penetrate into the sample. In this work, we show that the transmission coefficient and the attenuation length of the base layer can be enhanced by more than one order of magnitude, if the commonly used thin metal film is replaced by a molecular beam epitaxy grown InAs layer. At low temperatures (T=100K), a passivated InAs layer yields an attenuation length in the order of 70-90 nm instead of 5 nm obtained on Au films. © 1998 American Institute of Physics.

U2 - 10.1063/1.122132

DO - 10.1063/1.122132

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

A highly transmittive semiconductor base for ballistic electron emission microscopy

Abstract

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