TY - JOUR
T1 - A high sensitive pressure sensor with the novel bossed diaphragm combined with peninsula-island structure
AU - Xu, Tingzhong
AU - Zhao, Libo
AU - Jiang, Zhuangde
AU - Guo, Xin
AU - Ding, Jianjun
AU - Xiang, Wei
AU - Zhao, Yulong
PY - 2016/6/15
Y1 - 2016/6/15
N2 - A Micro Electromechanical Systems (MEMS) piezoresistive pressure sensor chip with high sensitivity has been developed to measure the ultra-low pressure of several mbar. A novel bossed diaphragm combined with peninsula-island structure is designed. The proposed diaphragm can alleviate the trade-off between sensitivity and non-linearity to realize the measurement of ultra-low pressure with low non-linearity. Especially, the strain energy dissipating outside the stress concentration region (SCR) is reduced remarkably by the proposed diaphragm to achieve high sensitivity. The optimization process for the proposed diaphragm has been presented by finite element method (FEM) to make the sensor chip achieve a higher sensitivity and a lower non-linearity. A fabricated pressure sensor was packaged with the proposed sensor chip and tested to obtain the sensitivity of 0.066 mV/V/Pa and non-linearity of 0.33%FS in the working range of 0-500 Pa. The proposed sensor chip is potentially a better choice for high sensitive pressure sensor.
AB - A Micro Electromechanical Systems (MEMS) piezoresistive pressure sensor chip with high sensitivity has been developed to measure the ultra-low pressure of several mbar. A novel bossed diaphragm combined with peninsula-island structure is designed. The proposed diaphragm can alleviate the trade-off between sensitivity and non-linearity to realize the measurement of ultra-low pressure with low non-linearity. Especially, the strain energy dissipating outside the stress concentration region (SCR) is reduced remarkably by the proposed diaphragm to achieve high sensitivity. The optimization process for the proposed diaphragm has been presented by finite element method (FEM) to make the sensor chip achieve a higher sensitivity and a lower non-linearity. A fabricated pressure sensor was packaged with the proposed sensor chip and tested to obtain the sensitivity of 0.066 mV/V/Pa and non-linearity of 0.33%FS in the working range of 0-500 Pa. The proposed sensor chip is potentially a better choice for high sensitive pressure sensor.
KW - MEMS
KW - Non-linearity
KW - Peninsula-island structure
KW - Sensitivity
KW - Ultra-low pressure sensor
UR - https://www.mendeley.com/catalogue/99e6128d-b5e4-3965-a154-0fbfa2ec8c72/
U2 - 10.1016/j.sna.2016.04.027
DO - 10.1016/j.sna.2016.04.027
M3 - Article
SN - 0924-4247
VL - 244
SP - 66
EP - 76
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
ER -