Abstract
This paper presents an mm-wave Doherty PA in a Infineon 130-nm SiGe BiCMOS for output power and back-off efficiency optimization for 5G communications. The output stage of the main PA and the auxiliary PA use a stacked topology for high output power without trading the power gain. A voltage-combiner with a transformer-based output matching network is proposed to achieve a true Doherty load modulation in a wide signal bandwidth while maintaining a compact layout. The PA is fabricated with Infineon 0.13 $\mu\mathrm{m}$ SiGe BiCMOS technology with a core area of 0.36 $\text{mm}^{2}$. At 5G 28 GHz, the measured OP1db is 22.9 dBm, and PAE at 6-dB PBO is 17.4%. At 28 GHz with 400 MHz bandwidth, it shows an EVM of 5% with average output power $(\mathbf{P}_{\text{avg}})$ of 15.32 dBm with 14.6% PAE.
Original language | English |
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Title of host publication | 2022 17th European Microwave Integrated Circuits Conference (EuMIC) |
Pages | 193-195 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 27 Sept 2022 |
Event | 2022 17th European Microwave Integrated Circuits Conference (EuMIC) - Milan, Italy Duration: 26 Sept 2022 → 27 Sept 2022 |
Conference
Conference | 2022 17th European Microwave Integrated Circuits Conference (EuMIC) |
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Period | 26/09/22 → 27/09/22 |
Keywords
- 5G mobile communication
- Network topology
- Bandwidth
- Transformer cores
- BiCMOS integrated circuits
- Transformers
- Topology