Project Details
Description
The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies.
Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage
Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage
| Short title | UltimateGaN |
|---|---|
| Acronym | UltimateGaN |
| Status | Finished |
| Effective start/end date | 1/05/19 → 31/10/22 |
Collaborative partners
- Infineon Technologies Austria AG (lead)
- Fronius International GmbH (Project partner)
- Graz University of Technology (Project partner)
- AT&S Austria Technologie & Systemtechnik Aktiengesellschaft (Project partner)
- Interuniversitair Micro-Elektronica Centrum (Project partner)
- Aixtron SE (Project partner)
- Infineon Technologies AG (Project partner)
- Siltronic AG (Project partner)
- RISE Research Institutes of Sweden (Project partner)
Keywords
- vertical power GaN
- benchmark lateral power GaN
- affordable RF GaN
- 5G
- Smart Grid
- Smart Mobility
Fingerprint
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.
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Comparison of the parasitic Impedances from the Drain-Source Path of Power Transistor Packages at up to 2 GHz
Moldaschl, T., Woetzel, S., Latella, R., Galvano, I. & Binder, A., 2021, In: Engineering Reports.Research output: Contribution to journal › Article › peer-review
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Two-Way Coupled Thermal-Electric Simulation of a Packaged Laserdiode using Reduced Order Models
Moldaschl, T., Grosso, G., Fuger, R. & Binder, A., Oct 2021.Research output: No entry here › Abstract › peer-review
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Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology
Lenzhofer, M. & Frank, A., 2018, 18th International Conference on Power Electronics and Motion Control. p. 820 - 825Research output: Conference proceeding/Chapter in Book › Conference Paper › peer-review