Research for GaN Technologies, devices and applications to address the challenges of the future GaN roadmap

Project Details

Description

The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies.
Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage
Short titleUltimateGaN
AcronymUltimateGaN
StatusFinished
Effective start/end date1/05/1931/10/22

Collaborative partners

  • Fronius International GmbH (Project partner)
  • AT&S Austria Technologie & Systemtechnik Aktiengesellschaft (Project partner)
  • Interuniversitair Micro-Elektronica Centrum (Project partner)
  • Aixtron SE (Project partner)
  • Infineon Technologies AG (Project partner)
  • Siltronic AG (Project partner)
  • RISE Research Institutes of Sweden (Project partner)

Keywords

  • vertical power GaN
  • benchmark lateral power GaN
  • affordable RF GaN
  • 5G
  • Smart Grid
  • Smart Mobility

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