Abstract
In this work, an alternative dry etching approach for parylene AF4 is presented based on a photoresist soft mask, which results in a relatively simpler, faster, cheaper and environmentally friendly process in comparison to the typical dry etching process with a hard mask. 2.5 µm thick parylene AF4 was deposited on a silicon (Si) substrate by vapor deposition polymerization (VDP). A 5 µm thick photoresist was used as a soft mask, while parylene AF4 patterning was done using an oxygen (O 2 )-argon (Ar) inductively coupled plasma reactive ion etching (ICP-RIE) process. The AF4:photoresist selectivity was around 1 while the AF 4 etching rate was roughly 275 nm/min for an Ar/02 ratio of 0.1 at 20mTorr and ICP:CCP powers of 1000W:50W respectively. The influence of the ICP plasma parameters on the AF 4 etching rate was investigated and the results suggested a predominant oxygen radicals-based reactive chemical etching mechanism.
Originalsprache | Englisch |
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Seiten | 109 |
Seitenumfang | 113 |
Publikationsstatus | Veröffentlicht - 18 Jän. 2023 |
Veranstaltung | 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC): EPTC - Singapore, Singapore, Singapore, Singapur Dauer: 7 Dez. 2022 → 9 Dez. 2022 Konferenznummer: 24th http://2022 IEEE 24th Electronics Packaging Technology Conference (EPTC) |
Konferenz
Konferenz | 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC) |
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Kurztitel | EPTC |
Land/Gebiet | Singapur |
Ort | Singapore |
Zeitraum | 7/12/22 → 9/12/22 |
Internetadresse |