Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing

M. De Biasio; M. Kraft; E. Geier; B. Goller; Ch. Bergmann; R. Esteve; M. Cerezuela-Barreto; D. Lewke; M. Schellenberger; M. Roesner

doi:10.1117/12.2259927

Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing

M. De Biasio, M. Kraft, E. Geier, B. Goller, Ch. Bergmann, R. Esteve, M. Cerezuela-Barreto, D. Lewke, M. Schellenberger, M. Roesner

Photonic Systems (PHOS)

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Originalsprache	Englisch
Titel	Next-Generation Spectroscopic Technologies X
Redakteure/-innen	Mark A. Druy, Richard A. Crocombe, Steven M. Barnett, Luisa T. Profeta
Seiten	133 - 140
Band	10210
DOIs	https://doi.org/10.1117/12.2259927
Publikationsstatus	Veröffentlicht - 2017

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10.1117/12.2259927

https://doi.org/10.1117/12.2259927

Dieses zitieren

Biasio, M. D., Kraft, M., Geier, E., Goller, B., Bergmann, C., Esteve, R., Cerezuela-Barreto, M., Lewke, D., Schellenberger, M., & Roesner, M. (2017). Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing. in M. A. Druy, R. A. Crocombe, S. M. Barnett, & L. T. Profeta (Hrsg.), Next-Generation Spectroscopic Technologies X (Band 10210, S. 133 - 140) https://doi.org/10.1117/12.2259927

@inproceedings{670f393463e64fb0a4399cf0928c69cc,

title = "Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing",

keywords = "Raman spectroscopy, semiconductor, stress, silicon, silicon carbide",

author = "Biasio, {M. De} and M. Kraft and E. Geier and B. Goller and Ch. Bergmann and R. Esteve and M. Cerezuela-Barreto and D. Lewke and M. Schellenberger and M. Roesner",

year = "2017",

doi = "10.1117/12.2259927",

language = "English",

volume = "10210",

pages = "133 -- 140",

editor = "Druy, {Mark A.} and Crocombe, {Richard A.} and Barnett, {Steven M.} and Profeta, {Luisa T.}",

booktitle = "Next-Generation Spectroscopic Technologies X",

}

Biasio, MD, Kraft, M, Geier, E, Goller, B, Bergmann, C, Esteve, R, Cerezuela-Barreto, M, Lewke, D, Schellenberger, M & Roesner, M 2017, Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing. in MA Druy, RA Crocombe, SM Barnett & LT Profeta (Hrsg.), Next-Generation Spectroscopic Technologies X. Bd. 10210, S. 133 - 140. https://doi.org/10.1117/12.2259927

Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing. / Biasio, M. De; Kraft, M.; Geier, E. et al.
Next-Generation Spectroscopic Technologies X. Hrsg. / Mark A. Druy; Richard A. Crocombe; Steven M. Barnett; Luisa T. Profeta. Band 10210 2017. S. 133 - 140.

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

TY - GEN

T1 - Raman micro-spectroscopy as a non-destructive key analysis tool in current power semiconductor manufacturing

AU - Biasio, M. De

AU - Kraft, M.

AU - Geier, E.

AU - Goller, B.

AU - Bergmann, Ch.

AU - Esteve, R.

AU - Cerezuela-Barreto, M.

AU - Lewke, D.

AU - Schellenberger, M.

AU - Roesner, M.

PY - 2017

Y1 - 2017

KW - Raman spectroscopy

KW - semiconductor

KW - stress

KW - silicon

KW - silicon carbide

U2 - 10.1117/12.2259927

DO - 10.1117/12.2259927

M3 - Conference Paper

VL - 10210

SP - 133

EP - 140

BT - Next-Generation Spectroscopic Technologies X

A2 - Druy, Mark A.

A2 - Crocombe, Richard A.

A2 - Barnett, Steven M.

A2 - Profeta, Luisa T.

ER -