We investigate the concept of slab Tamm plasmons (STP) in regard to their properties as resonant absorber or emitter structures in the mid-infrared spectral region. In particular, we compare the selective absorption characteristics resulting from different choices of absorbing material, namely Ag, W, Mo or highly doped Si. We devised a simplified optimization procedure using finite element simulations for the calculation of the absorption together with the application of micro-genetic algorithm (GA) optimization. As characteristic for plasmonic structures, the specific choice of the metallic absorber material strongly determines the achievable quality factor (Q). We show that STP absorbers are able to mitigate the degradation of Q for less reflective metals or even non-metals such as doped silicon as plasmonic absorber material. Moreover, our results strongly indicate that the maximum achievable plasmon-enhanced absorption does not depend on the choice of the plasmonic material presuming an optimized configuration is obtained via the GA process. As a result, absorptances in the order of 50–80% could be achieved for any absorber material depending on the slab thickness (up to 1.1 µm) and a target resonance wavelength of 4.26 µm (CO2 absorption line). The proposed structures are compatible with modern semiconductor mass fabrication processes. At the same time, the optimization procedure allows us to choose the best plasmonic material for the corresponding application of the STP structure. Therefore, we believe that our results represent crucial advances towards corresponding integrated resonant absorber and thermal emitter components.
|Seiten (von - bis)||6804|
|Publikationsstatus||Veröffentlicht - 2020|