Design of monolithic band-pass filter using high performance passive and active component technology for WLAN applications

Jingfeng Ding; Andreas Springer; Thomas Bartl; Gernot Hueber; Richard Hagelauer

doi:10.23919/EUMC.2010.5616360

Design of monolithic band-pass filter using high performance passive and active component technology for WLAN applications

Jingfeng Ding, Andreas Springer, Thomas Bartl, Gernot Hueber, Richard Hagelauer

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

The trend for low-cost, small dimension, thin profile, multi-function and multi-mode handheld wireless devices are required by the future user. In this paper, we present the design of an Electrostatic Discharge (ESD)-protection free band-pass filter (BPF) in an improved high resistivity silicon copper technology for the monolithic integration of active and passive devices. Inter-digital metal capacitors instead of typical Metal-Isolator-Metal (MIM) capacitors are used for better quality factor and higher breakdown voltage of up to 800 V. Electromagnetic (EM) simulation was extensively used in this design for inductor and filter optimization. The fabricated device by the first run has an insertion loss of less than 2 dB and an out of band attenuation of more than 25 dB for the WLAN 2.4 GHz frequency band and features a size of 1.0×1.3 mm².

Originalsprache	Englisch
Titel	The 40th European Microwave Conference
Herausgeber (Verlag)	IEEE Computer Society
Seiten	557-560
Seitenumfang	4
ISBN (Print)	978-2-87487-016-3
DOIs	https://doi.org/10.23919/EUMC.2010.5616360
Publikationsstatus	Veröffentlicht - 30 Sep. 2010
Extern publiziert	Ja
Veranstaltung	The 40th European Microwave Conference - Paris, France Dauer: 28 Sep. 2010 → 30 Sep. 2010

Konferenz

Konferenz	The 40th European Microwave Conference
Zeitraum	28/09/10 → 30/09/10

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abstract = "The trend for low-cost, small dimension, thin profile, multi-function and multi-mode handheld wireless devices are required by the future user. In this paper, we present the design of an Electrostatic Discharge (ESD)-protection free band-pass filter (BPF) in an improved high resistivity silicon copper technology for the monolithic integration of active and passive devices. Inter-digital metal capacitors instead of typical Metal-Isolator-Metal (MIM) capacitors are used for better quality factor and higher breakdown voltage of up to 800 V. Electromagnetic (EM) simulation was extensively used in this design for inductor and filter optimization. The fabricated device by the first run has an insertion loss of less than 2 dB and an out of band attenuation of more than 25 dB for the WLAN 2.4 GHz frequency band and features a size of 1.0×1.3 mm2.",

author = "Jingfeng Ding and Andreas Springer and Thomas Bartl and Gernot Hueber and Richard Hagelauer",

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AU - Ding, Jingfeng

AU - Springer, Andreas

AU - Bartl, Thomas

AU - Hueber, Gernot

AU - Hagelauer, Richard

PY - 2010/9/30

Y1 - 2010/9/30

N2 - The trend for low-cost, small dimension, thin profile, multi-function and multi-mode handheld wireless devices are required by the future user. In this paper, we present the design of an Electrostatic Discharge (ESD)-protection free band-pass filter (BPF) in an improved high resistivity silicon copper technology for the monolithic integration of active and passive devices. Inter-digital metal capacitors instead of typical Metal-Isolator-Metal (MIM) capacitors are used for better quality factor and higher breakdown voltage of up to 800 V. Electromagnetic (EM) simulation was extensively used in this design for inductor and filter optimization. The fabricated device by the first run has an insertion loss of less than 2 dB and an out of band attenuation of more than 25 dB for the WLAN 2.4 GHz frequency band and features a size of 1.0×1.3 mm2.

AB - The trend for low-cost, small dimension, thin profile, multi-function and multi-mode handheld wireless devices are required by the future user. In this paper, we present the design of an Electrostatic Discharge (ESD)-protection free band-pass filter (BPF) in an improved high resistivity silicon copper technology for the monolithic integration of active and passive devices. Inter-digital metal capacitors instead of typical Metal-Isolator-Metal (MIM) capacitors are used for better quality factor and higher breakdown voltage of up to 800 V. Electromagnetic (EM) simulation was extensively used in this design for inductor and filter optimization. The fabricated device by the first run has an insertion loss of less than 2 dB and an out of band attenuation of more than 25 dB for the WLAN 2.4 GHz frequency band and features a size of 1.0×1.3 mm2.

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BT - The 40th European Microwave Conference

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Design of monolithic band-pass filter using high performance passive and active component technology for WLAN applications

Abstract

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