Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Zhe Chen; Hao Gao; Dusan Milosevic; Peter Baltus

doi:10.1109/APMC47863.2020.9331334

Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Zhe Chen, Hao Gao, Dusan Milosevic, Peter Baltus

Millimeter Wave Technologies (mmW)

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 μm SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.

Originalsprache	Englisch
Titel	2020 IEEE Asia-Pacific Microwave Conference (APMC)
Herausgeber (Verlag)	IEEE Computer Society
Seiten	516-518
Seitenumfang	3
ISBN (Print)	978-1-7281-6963-7
DOIs	https://doi.org/10.1109/APMC47863.2020.9331334
Publikationsstatus	Veröffentlicht - 11 Dez. 2020
Veranstaltung	2020 IEEE Asia-Pacific Microwave Conference (APMC) - Hong Kong, Hong Kong Dauer: 8 Dez. 2020 → 11 Dez. 2020

Konferenz

Konferenz	2020 IEEE Asia-Pacific Microwave Conference (APMC)
Zeitraum	8/12/20 → 11/12/20

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10.1109/APMC47863.2020.9331334

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9331334

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title = "Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package",

abstract = "This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 μm SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.",

keywords = "Low-noise amplifiers, Semiconductor device measurement, 5G mobile communication, BiCMOS integrated circuits, System-on-chip, Gain, Silicon germanium",

author = "Zhe Chen and Hao Gao and Dusan Milosevic and Peter Baltus",

year = "2020",

month = dec,

day = "11",

doi = "10.1109/APMC47863.2020.9331334",

language = "English",

isbn = "978-1-7281-6963-7",

pages = "516--518",

booktitle = "2020 IEEE Asia-Pacific Microwave Conference (APMC)",

publisher = "IEEE Computer Society",

address = "United States",

note = "2020 IEEE Asia-Pacific Microwave Conference (APMC) ; Conference date: 08-12-2020 Through 11-12-2020",

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TY - GEN

T1 - Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

AU - Chen, Zhe

AU - Gao, Hao

AU - Milosevic, Dusan

AU - Baltus, Peter

PY - 2020/12/11

Y1 - 2020/12/11

N2 - This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 μm SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.

AB - This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 μm SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.

KW - Low-noise amplifiers

KW - Semiconductor device measurement

KW - 5G mobile communication

KW - BiCMOS integrated circuits

KW - System-on-chip

KW - Gain

KW - Silicon germanium

UR - https://ieeexplore.ieee.org/document/9331334/

U2 - 10.1109/APMC47863.2020.9331334

DO - 10.1109/APMC47863.2020.9331334

M3 - Conference Paper

SN - 978-1-7281-6963-7

SP - 516

EP - 518

BT - 2020 IEEE Asia-Pacific Microwave Conference (APMC)

PB - IEEE Computer Society

T2 - 2020 IEEE Asia-Pacific Microwave Conference (APMC)

Y2 - 8 December 2020 through 11 December 2020

ER -

Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Abstract

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