An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC

C. A. Fisher, R. Esteve, S. Doering, M. Roesner, M. De Biasio, M. Kraft, W. Schustereder, R. Rupp

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Titel	2016 European Conference on Silicon Carbide Related Materials (ECSCRM)
Seiten	1-1
Seitenumfang	1
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.411
Publikationsstatus	Veröffentlicht - 2016

Zugriff auf Dokument

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title = "An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC",

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AU - Fisher, C. A.

AU - Esteve, R.

AU - Doering, S.

AU - Roesner, M.

AU - De Biasio, M.

AU - Kraft, M.

AU - Schustereder, W.

AU - Rupp, R.

PY - 2016

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EP - 1

BT - 2016 European Conference on Silicon Carbide Related Materials (ECSCRM)

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