一种高机电耦合系数cmut及其制备方法

Zhikang Li (Erfinder/-in), Zhuangde Jiang (Erfinder/-in), Tingzhong Xu (Erfinder/-in), Jie Li (Erfinder/-in), Yihe Zhao (Erfinder/-in), Guoxi Luo (Erfinder/-in), Shuaishuai Guo (Erfinder/-in), Libo Zhao (Erfinder/-in)

    Publikation: SchutzrechtPatent

    Abstract

    The invention discloses a kind of high electromechanical coupling factor CMUT and preparation method thereof, the CMUT is greater than homalographic cavity area capacitor for routine CMUT moderate area post area capacitor and causes parasitic capacitance big, the small problem of electromechanical coupling factor, it is designed by the square waveform of top electrode thickness of insulating layer so that electrode connecting line and top electrode pad between the top electrode being located on the upside of post area are higher than the top electrode being located on the upside of cavity area, and the insulating materials for using relative dielectric constant small is stay material, the big insulating materials of relative dielectric constant is lower electrode insulation material, and pillar and the thickness of lower electrode dielectric layer is made to meet certain proportionate relationship, so as to effectively increase the equivalent electrode distance between post area upper/lower electrode, reduce the region parasitic capacitance, improve CMUT electromechanical coupling factor.
    Titel in ÜbersetzungA kind of high electromechanical coupling factor CMUT and preparation method
    OriginalspracheChinesisch (vereinfacht)
    VeröffentlichungsnummerCN109092650A
    PublikationsstatusVeröffentlicht - 2018

    Fingerprint

    Untersuchen Sie die Forschungsthemen von „一种高机电耦合系数cmut及其制备方法“. Zusammen bilden sie einen einzigartigen Fingerprint.

    Dieses zitieren