TY - JOUR
T1 - A comparative study on direct Cu–Cu bonding methodologies for copper pillar bumped flip-chips
AU - Ma, Y.
AU - Roshanghias, A.
AU - Binder, A.
PY - 2018/3/28
Y1 - 2018/3/28
N2 - Copper pillar micro bump is one of the platform technologies, which is essentially required for 2.5D/3D chip stacking and high-density electronic components. In this study, Cu–Cu direct thermo-compression bonding (TCB) and anisotropic conductive paste (ACP) bonding methods are proposed for Ø 100 µm Cu-pillar bumped flip-chips. The process parameters including bonding temperature, bonding pressure and time are verified by die shear test and SEM/EDX cross-sectional analysis. The optimal bonding condition for TCB with regards to bonding pressure was defined to be 0.5N/bump at 300 °C or 0.3N/bump at 360 °C. In the case of ACP bonding, the minimum bonding pressure was about 0.3N/bump for gaining a seamless bonding interface.
AB - Copper pillar micro bump is one of the platform technologies, which is essentially required for 2.5D/3D chip stacking and high-density electronic components. In this study, Cu–Cu direct thermo-compression bonding (TCB) and anisotropic conductive paste (ACP) bonding methods are proposed for Ø 100 µm Cu-pillar bumped flip-chips. The process parameters including bonding temperature, bonding pressure and time are verified by die shear test and SEM/EDX cross-sectional analysis. The optimal bonding condition for TCB with regards to bonding pressure was defined to be 0.5N/bump at 300 °C or 0.3N/bump at 360 °C. In the case of ACP bonding, the minimum bonding pressure was about 0.3N/bump for gaining a seamless bonding interface.
UR - https://www.mendeley.com/catalogue/5c8810ee-ee9b-31c1-8411-aeb582fbcb6a/
U2 - 10.1007/s10854-018-8965-8
DO - 10.1007/s10854-018-8965-8
M3 - Article
SN - 0957-4522
VL - 29
SP - 9347
EP - 9353
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
ER -