TY - JOUR
T1 - A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology
AU - Zhou, Peigen
AU - Chen, Jixin
AU - Yan, Pinpin
AU - Hou, Debin
AU - Gao, Hao
AU - Hong, Wei
PY - 2021/1/1
Y1 - 2021/1/1
N2 - This letter describes an ultrabroadband power amplifier (PA) in a 130-nm SiGe:C BiCMOS technology. To achieve this broadband while keeping a compact chip size, an on-chip transformer-based dual-LC-tank power matching method is proposed and implemented for achieving this 54.8% fractional large-signal 3-dB bandwidth (28.5-50 GHz). Additionally, a high quality factor (Q) bypass MOM capacitor is proposed and implemented in the transistor layout to decrease the parasitic inductance influence for increasing the gain and keep unconditional stability of the PA. The complete PA achieves a measured saturated output power of 19.2 dBm with 21.5-GHz (28.5-50 GHz) large-signal -3-dB bandwidth at 3.3-V power supply. This broadband PA is only 0.63 mm2, and the measured S21 is higher than 22.5 dB from 18.5 to 50 GHz with recorded 70.3% fractional small-signal 3-dB bandwidth for silicon-based cascode PA. The measured peak OP1dB is 16.8 dBm at 44 GHz, and the maximum power-added efficiency (PAE) is 23.9% at 32 GHz.
AB - This letter describes an ultrabroadband power amplifier (PA) in a 130-nm SiGe:C BiCMOS technology. To achieve this broadband while keeping a compact chip size, an on-chip transformer-based dual-LC-tank power matching method is proposed and implemented for achieving this 54.8% fractional large-signal 3-dB bandwidth (28.5-50 GHz). Additionally, a high quality factor (Q) bypass MOM capacitor is proposed and implemented in the transistor layout to decrease the parasitic inductance influence for increasing the gain and keep unconditional stability of the PA. The complete PA achieves a measured saturated output power of 19.2 dBm with 21.5-GHz (28.5-50 GHz) large-signal -3-dB bandwidth at 3.3-V power supply. This broadband PA is only 0.63 mm2, and the measured S21 is higher than 22.5 dB from 18.5 to 50 GHz with recorded 70.3% fractional small-signal 3-dB bandwidth for silicon-based cascode PA. The measured peak OP1dB is 16.8 dBm at 44 GHz, and the maximum power-added efficiency (PAE) is 23.9% at 32 GHz.
KW - Broadband communication
KW - Frequency measurement
KW - Capacitors
KW - Method of moments
KW - Impedance
KW - Bandwidth
KW - Radio frequency
UR - https://ieeexplore.ieee.org/document/9336690/
U2 - 10.1109/LSSC.2021.3054884
DO - 10.1109/LSSC.2021.3054884
M3 - Article
SN - 2573-9603
VL - 4
SP - 44
EP - 47
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
M1 - 9336690
ER -